It is dedicated to the growth of III-V family semiconductors and their application in the development of Infrared radiation emitting devices and detectors and for thermophotovoltaic conversion.
The central interest is the epitaxial growth of GaSb and its alloys with other III-V semiconductors using Liquid Phase Epitaxy technique and by molecular beams.
In these activities, they actively participate in undergraduate and postgraduate studies, preparing theses.
Scientific results are published in international journals.
Scientific elaboration activities are also carried out through books and journal articles.
Team leader Francisco de Anda Salazar PhD. SNI I
| Dr. Andrei Yurievich Gorbatchev SNI I
| SNI I
|
Laboratories
Device Characterization
Crystal Growth
Liquid Phase Epitaxy I
Liquid Phase Epitaxy II
Epotaxy MBE GaSb
Students
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Correo
Directorio
